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Study and characterization of GaN MOS capacitors: Planar vs trench topographies
dc.contributor.author | Mukherjee, K. | |
dc.contributor.author | De Santi, C. | |
dc.contributor.author | You, S. | |
dc.contributor.author | Geens, K. | |
dc.contributor.author | Borga, M. | |
dc.contributor.author | Decoutere, S. | |
dc.contributor.author | Bakeroot, B. | |
dc.contributor.author | Diehle, P. | |
dc.contributor.author | Altmann, F. | |
dc.contributor.author | Meneghesso, G. | |
dc.contributor.author | Zanoni, E. | |
dc.contributor.author | Meneghini, M. | |
dc.date.accessioned | 2022-07-29T02:29:07Z | |
dc.date.available | 2022-07-29T02:29:07Z | |
dc.date.issued | 2022-APR 4 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.other | WOS:000827448000008 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40182 | |
dc.source | WOS | |
dc.title | Study and characterization of GaN MOS capacitors: Planar vs trench topographies | |
dc.type | Journal article | |
dc.contributor.imecauthor | You, S. | |
dc.contributor.imecauthor | Geens, K. | |
dc.contributor.imecauthor | Borga, M. | |
dc.contributor.imecauthor | Decoutere, S. | |
dc.contributor.imecauthor | Bakeroot, B. | |
dc.identifier.doi | 10.1063/5.0087245 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.journal | APPLIED PHYSICS LETTERS | |
dc.source.issue | 14 | |
dc.source.volume | 120 | |
imec.availability | Under review |
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