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Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Publication:
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
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Date
2022
Journal article
https://doi.org/10.1063/5.0087245
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mukherjee, K.
;
De Santi, C.
;
You, Shuzhen
;
Geens, Karen
;
Borga, Matteo
;
Decoutere, Stefaan
;
Bakeroot, Benoit
;
Diehle, P.
;
Altmann, F.
;
Meneghesso, G.
;
Zanoni, E.
;
Meneghini, M.
Journal
APPLIED PHYSICS LETTERS
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since deposited on 2022-07-29
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Downloads
355
since deposited on 2022-07-29
44
last month
7
last week
Acq. date: 2025-12-11
Views
1509
since deposited on 2022-07-29
1
last month
Acq. date: 2025-12-11
Citations