Publication:

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Date

2022
Journal article
https://doi.org/10.1063/5.0087245
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Published version 2.17 MB

Author(s)

Mukherjee, K.
;
De Santi, C.
;
You, Shuzhen  
;
Geens, Karen  
;
Borga, Matteo  
;
Decoutere, Stefaan  
;
Bakeroot, Benoit  
;
Diehle, P.
;
Altmann, F.
;
Meneghesso, G.
;
Zanoni, E.
;
Meneghini, M.

Journal

APPLIED PHYSICS LETTERS

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499 since deposited on 2022-07-29
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1512 since deposited on 2022-07-29
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