Publication:
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
| dc.contributor.author | Mukherjee, K. | |
| dc.contributor.author | De Santi, C. | |
| dc.contributor.author | You, Shuzhen | |
| dc.contributor.author | Geens, Karen | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Diehle, P. | |
| dc.contributor.author | Altmann, F. | |
| dc.contributor.author | Meneghesso, G. | |
| dc.contributor.author | Zanoni, E. | |
| dc.contributor.author | Meneghini, M. | |
| dc.contributor.imecauthor | You, Shuzhen | |
| dc.contributor.imecauthor | Geens, Karen | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.date.accessioned | 2022-12-01T16:16:03Z | |
| dc.date.available | 2022-07-29T02:29:07Z | |
| dc.date.available | 2022-12-01T16:16:03Z | |
| dc.date.embargo | 2023-04-04 | |
| dc.date.issued | 2022 | |
| dc.description.wosFundingText | This work was carried out within the UltimateGaN project, which has received funding from the ECSEL Joint Undertaking (JU) under Grant Agreement No. 826392. The JU receives support from the European Union's Horizon 2020 research and innovation programme and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, and Switzerland. The UltimateGaN project is co-funded by the Ministry of Education, Universities and Research in Italy. The authors would like to thank A. B_obenroth for TEM sample preparation. | |
| dc.identifier.doi | 10.1063/5.0087245 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40182 | |
| dc.publisher | AIP Publishing | |
| dc.source.beginpage | 143501 | |
| dc.source.endpage | na | |
| dc.source.issue | 14 | |
| dc.source.journal | APPLIED PHYSICS LETTERS | |
| dc.source.numberofpages | 5 | |
| dc.source.volume | 120 | |
| dc.title | Study and characterization of GaN MOS capacitors: Planar vs trench topographies | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | Original bundle
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