Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Mukherjee, K.; De Santi, C.; You, Shuzhen; Geens, Karen; Borga, Matteo; Decoutere, Stefaan; Bakeroot, Benoit; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

doi:10.1063/5.0087245

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Study and characterization of GaN MOS capacitors: Planar vs trench topographies

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2022

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https://doi.org/10.1063/5.0087245

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APPLIED PHYSICS LETTERS

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Study and characterization of GaN MOS capacitors: Planar vs trench topographies

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