Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Publication:
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Date
2022
Journal article
https://doi.org/10.1063/5.0087245
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
Published version
2.17 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mukherjee, K.
;
De Santi, C.
;
You, Shuzhen
;
Geens, Karen
;
Borga, Matteo
;
Decoutere, Stefaan
;
Bakeroot, Benoit
;
Diehle, P.
;
Altmann, F.
;
Meneghesso, G.
;
Zanoni, E.
;
Meneghini, M.
Journal
APPLIED PHYSICS LETTERS
Abstract
Description
Metrics
Downloads
283
since deposited on 2022-07-29
Acq. date: 2025-10-24
Views
1508
since deposited on 2022-07-29
Acq. date: 2025-10-24
Citations
Metrics
Downloads
283
since deposited on 2022-07-29
Acq. date: 2025-10-24
Views
1508
since deposited on 2022-07-29
Acq. date: 2025-10-24
Citations