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TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
dc.contributor.author | Bonaldo, Stefano | |
dc.contributor.author | Gorchichko, Mariia | |
dc.contributor.author | Zhang, En Xia | |
dc.contributor.author | Ma, Teng | |
dc.contributor.author | Mattiazzo, Serena | |
dc.contributor.author | Bagatin, Marta | |
dc.contributor.author | Paccagnella, Alessandro | |
dc.contributor.author | Gerardin, Simone | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.contributor.author | Reed, Robert A. | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Mitard, Jerome | |
dc.contributor.author | Fleetwood, Daniel M. | |
dc.date.accessioned | 2022-07-31T02:29:16Z | |
dc.date.available | 2022-07-31T02:29:16Z | |
dc.date.issued | 2022-JUL | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.other | WOS:000828698900018 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40187 | |
dc.source | WOS | |
dc.title | TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses | |
dc.type | Journal article | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Mitard, Jerome | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Mitard, Jerome::0000-0002-7422-079X | |
dc.identifier.doi | 10.1109/TNS.2022.3142385 | |
dc.source.numberofpages | 9 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1444 | |
dc.source.endpage | 1452 | |
dc.source.journal | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | |
dc.source.issue | 7 | |
dc.source.volume | 69 | |
imec.availability | Under review |
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