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dc.contributor.authorZhou, Xue
dc.contributor.authorHu, Zeyu
dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Weidong
dc.contributor.authorClima, Sergiu
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorFantini, Andrea
dc.contributor.authorGarbin, Daniele
dc.contributor.authorDelhougne, Romain
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2022-08-20T02:37:25Z
dc.date.available2022-08-20T02:37:25Z
dc.date.issued2022-JUL
dc.identifier.issn0741-3106
dc.identifier.otherWOS:000838380800024
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40285
dc.sourceWOS
dc.titleImpact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching
dc.typeJournal article
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGarbin, Daniele
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecFantini, Andrea::0000-0002-3220-8856
dc.contributor.orcidimecGarbin, Daniele::0000-0002-5884-1043
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.identifier.doi10.1109/LED.2022.3179590
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage1061
dc.source.endpage1064
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.issue7
dc.source.volume43
imec.availabilityUnder review


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