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Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells
dc.contributor.author | Sharma, Rajiv | |
dc.contributor.author | Alleva, Alessandro | |
dc.contributor.author | Hajjiah, Ali | |
dc.contributor.author | Radhakrishnan, Hariharsudan Sivaramakrishnan | |
dc.contributor.author | Poortmans, Jef | |
dc.date.accessioned | 2022-08-31T02:40:28Z | |
dc.date.available | 2022-08-31T02:40:28Z | |
dc.date.issued | 2022-AUG 10 | |
dc.identifier.issn | 2574-0962 | |
dc.identifier.other | WOS:000842981400001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40325 | |
dc.source | WOS | |
dc.title | Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells | |
dc.type | Journal article | |
dc.contributor.imecauthor | Sharma, Rajiv | |
dc.contributor.imecauthor | Radhakrishnan, Hariharsudan Sivaramakrishnan | |
dc.contributor.imecauthor | Poortmans, Jef | |
dc.contributor.orcidimec | Sharma, Rajiv::0000-0002-6724-1437 | |
dc.contributor.orcidimec | Poortmans, Jef::0000-0003-2077-2545 | |
dc.identifier.doi | 10.1021/acsaem.2c01631 | |
dc.source.numberofpages | 8 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 9994 | |
dc.source.endpage | 10001 | |
dc.source.journal | ACS APPLIED ENERGY MATERIALS | |
dc.source.issue | 8 | |
dc.source.volume | 5 | |
imec.availability | Under review |
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