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High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

dc.contributor.authorTang, Shun-Wei
dc.contributor.authorHuang, Zhen-Hong
dc.contributor.authorChen, Szu-Chia
dc.contributor.authorLin, Wei-Syuan
dc.contributor.authorde Jaeger, Brice
dc.contributor.authorWellekens, Dirk
dc.contributor.authorBorga, Matteo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorWu, Tian-Li
dc.date.accessioned2023-04-06T13:36:42Z
dc.date.available2022-10-29T02:58:15Z
dc.date.available2023-04-06T13:36:42Z
dc.date.issued2022
dc.identifier.issn0741-3106
dc.identifier.otherWOS:000861441600012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40635.2
dc.sourceWOS
dc.titleHigh Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
dc.typeJournal article
dc.contributor.imecauthorde Jaeger, Brice
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecWellekens, Dirk::0000-0003-4532-5784
dc.identifier.doi10.1109/LED.2022.3198876
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage1625
dc.source.endpage1628
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.issue10
dc.source.volume43
imec.availabilityPublished - imec
dc.description.wosFundingTextThis work was financially supported by the "Center for the Semiconductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the National Science and Technology Council (NSTC), Taiwan, under Grant 111-2634-F-A49-008, 111-2622-8-A49-018-SB and the Young Scholar Fellowship Program under Grant 111-2636-E-A49-012. The review of this letter was arranged by Editor H. G. G. Xing.


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220.500.12860/40635.2*2023-04-06T13:35:46Zvalidation by library/open access desk
120.500.12860/406352022-10-29T02:58:15Z

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