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Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorClaeys, Cor
dc.date.accessioned2022-10-30T02:55:16Z
dc.date.available2022-10-30T02:55:16Z
dc.date.issued2022-AUG
dc.identifier.issn0038-1101
dc.identifier.otherWOS:000868453300002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40651
dc.sourceWOS
dc.titleImpact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.identifier.doi10.1016/j.sse.2022.108318
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.volume194
imec.availabilityUnder review


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VersionItemDateSummary
220.500.12860/40651.22023-04-06T13:16:32Zvalidation by library/open access desk
120.500.12860/40651*2022-10-30T02:55:16Z

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