Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition

Abstract

During TiO2 atomic layer deposition (ALD) using TiCl4 and H2O at similar to 150 degrees C, nucleation proceeds rapidly on hydroxylated SiO2 but is inherently delayed on passivated surfaces such as H-terminated silicon (Si-H) and trimethylsilyl-passivated SiO2 (SiO2-TMS) formed using dimethylamino-trimethylsilane (DMA-TMS) as a small molecule inhibitor. In this work, we explore details of TiO2 nucleation on both Si-H and SiO2-TMS and show that the mechanisms leading to unwanted nuclei depend strongly on the passivation mechanism. Initial growth is observed as a function of ALD cycles using scanning electron microscopy to obtain average particle size, density, and overall surface coverage fraction. Also, average film thickness vs cycle is estimated using ellipsometry or Rutherford backscattering spectrometry. Data are compared to an analytical model that considers that either nucleation sites are present on the starting non-growth surface or sites are generated during the ALD process. On the Si-H surface, data and modeling indicate that nucleation occurs predominantly from a fixed number of nucleation sites present on the starting growth surface that start to immediately grow. However, on TMS-passivated SiO2, nucleation sites are predominantly generated during the growth process so that the density of nucleation sites increases as growth proceeds. Results indicate that nucleation sites are created when adsorbed ALD reactants become kinetically trapped on the SiO2-TMS surface. This demonstrates that mechanisms associated with unwanted nucleation during area-selective deposition (ASD) can depend on details of the surface passivation scheme, thereby providing insight to help to improve ASD strategies for advanced applications.