Enhancement of the anomalous Nernst effect in epitaxial Fe4N films grown on SrTiO3(001) substrates with oxygen deficient layers
| dc.contributor.author | Ito, Keita | |
| dc.contributor.author | Wang, Jian | |
| dc.contributor.author | Shimada, Yusuke | |
| dc.contributor.author | Sharma, Himanshu | |
| dc.contributor.author | Mizuguchi, Masaki | |
| dc.contributor.author | Takanashi, Koki | |
| dc.date.accessioned | 2023-05-25T11:01:54Z | |
| dc.date.available | 2023-01-01T03:09:39Z | |
| dc.date.available | 2023-05-25T11:01:54Z | |
| dc.date.issued | 2022 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.other | WOS:000892441700009 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40932.3 | |
| dc.source | WOS | |
| dc.title | Enhancement of the anomalous Nernst effect in epitaxial Fe4N films grown on SrTiO3(001) substrates with oxygen deficient layers | |
| dc.type | Journal article | |
| dc.contributor.imecauthor | Sharma, Himanshu | |
| dc.contributor.orcidimec | Sharma, Himanshu::0000-0002-1938-2489 | |
| dc.date.embargo | 2023-10-06 | |
| dc.identifier.doi | 10.1063/5.0102928 | |
| dc.source.numberofpages | 7 | |
| dc.source.peerreview | yes | |
| dc.source.beginpage | Art. 133904 | |
| dc.source.endpage | na | |
| dc.source.journal | JOURNAL OF APPLIED PHYSICS | |
| dc.source.issue | 13 | |
| dc.source.volume | 132 | |
| imec.availability | Published - open access | |
| dc.description.wosFundingText | We thank T. Seki, W. Zhou, and Y. Sakuraba for technical support to measure ANE, and T. Sasaki for her help doing the film deposition by ion beam sputtering. This work was supported by the Grants-in-Aid for Scientific Research (C) (Grant No. JP21K04859) and (S) (Grant Nos. JP18H05246 and JP21H05016) from JSPS KAKENHI, JST-CREST (Grant No. JPMJCR1524), the Murata Science Foundation, CASIO Science Promotion Foundation (37-01), Research Foundation for the Electrotechnology of Chubu, Iketani Science and Technology Foundation, Collaborative Research Center on Energy Materials, Institute for Materials Research (IMR), Tohoku University, and the Cooperative Research Project of the Research Institute of Electric Communication, Tohoku University. The device fabrication, the film deposition by ion beam sputtering, and the XRD measurements were carried out at the Cooperative Research and Development Center for Advanced Materials, IMR, Tohoku University (Proposal Nos. 20G0415 and 202011-CRKEQ-0403). |