| dc.contributor.author | Porret, Clément | |
| dc.contributor.author | Rengo, Gianluca | |
| dc.contributor.author | Ayyad, Mustafa | |
| dc.contributor.author | Hikavyy, Andriy | |
| dc.contributor.author | Rosseel, Erik | |
| dc.contributor.author | Langer, Robert | |
| dc.contributor.author | Loo, Roger | |
| dc.date.accessioned | 2023-07-07T08:03:29Z | |
| dc.date.available | 2023-02-20T03:21:23Z | |
| dc.date.available | 2023-07-07T08:03:29Z | |
| dc.date.issued | 2023 | |
| dc.identifier.issn | 0021-4922 | |
| dc.identifier.other | WOS:000923037200001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41116.2 | |
| dc.source | WOS | |
| dc.title | Low temperature selective growth of Ga-doped and Ga-B co-doped germanium source/drain for PMOS devices | |
| dc.type | Journal article | |
| dc.contributor.imecauthor | Porret, Clément | |
| dc.contributor.imecauthor | Rengo, Gianluca | |
| dc.contributor.imecauthor | Ayyad, Mustafa | |
| dc.contributor.imecauthor | Hikavyy, Andriy | |
| dc.contributor.imecauthor | Rosseel, Erik | |
| dc.contributor.imecauthor | Langer, Robert | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
| dc.contributor.orcidimec | Langer, Robert::0000-0002-1132-3468 | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.contributor.orcidimec | Porret, Clément::0000-0002-4561-348X | |
| dc.contributor.orcidimec | Rengo, Gianluca::0000-0002-3410-6466 | |
| dc.contributor.orcidimec | Ayyad, Mustafa::0000-0003-2222-8295 | |
| dc.contributor.orcidimec | Rosseel, Erik::0000-0002-2737-8391 | |
| dc.date.embargo | 2023-07-31 | |
| dc.identifier.doi | 10.35848/1347-4065/acb1b9 | |
| dc.source.numberofpages | 6 | |
| dc.source.peerreview | yes | |
| dc.source.beginpage | Art. SC1043 | |
| dc.source.endpage | na | |
| dc.source.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | |
| dc.source.issue | SC | |
| dc.source.volume | 62 | |
| imec.availability | Published - open access | |
| dc.description.wosFundingText | The authors express their appreciation to local authorities, the imec core program members and the pilot line. Air Liquide Advanced Materials is acknowledged for providing Ge2H6. The TTBGa MO precursor is from Dockweiler Chemicals GmbH. All epitaxial materials were grown in an ASM IntrepidTM CVD reactor. Gianluca Rengo received a PhD grant from the Flemish Research Foundation (FWO). This project received funding from the ECSEL Joint Undertaking (JU) under grant agreement No. 875999. The JU receives support from the European Union's Horizon 2020 research and innovation programme and Netherlands, Belgium, Germany, France, Austria, Hungary, United Kingdom, Romania, and Israel. | |
