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Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
dc.contributor.author | Favero, D. | |
dc.contributor.author | De Santi, C. | |
dc.contributor.author | Mukherjee, K. | |
dc.contributor.author | Geens, K. | |
dc.contributor.author | Borga, M. | |
dc.contributor.author | Bakeroot, B. | |
dc.contributor.author | You, S. | |
dc.contributor.author | Decoutere, S. | |
dc.contributor.author | Meneghesso, G. | |
dc.contributor.author | Zanoni, E. | |
dc.contributor.author | Meneghini, M. | |
dc.date.accessioned | 2023-02-27T03:28:50Z | |
dc.date.available | 2023-02-27T03:28:50Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 1541-7026 | |
dc.identifier.other | WOS:000922926400165 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41195 | |
dc.source | WOS | |
dc.title | Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Geens, K. | |
dc.contributor.imecauthor | Borga, M. | |
dc.contributor.imecauthor | Bakeroot, B. | |
dc.contributor.imecauthor | You, S. | |
dc.contributor.imecauthor | Decoutere, S. | |
dc.identifier.doi | 10.1109/IRPS48227.2022.9764600 | |
dc.identifier.eisbn | 978-1-6654-7950-9 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.conference | IEEE International Reliability Physics Symposium (IRPS) | |
dc.source.conferencedate | MAR 27-31, 2022 | |
dc.source.conferencelocation | Dallas | |
imec.availability | Under review |
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