Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO(2 )area-selective deposition

Abstract

Background Extreme ultraviolet (EUV) lithography is crucial to achieving smaller device sizes for next-generation technology, although organic resists face substantial challenges, such as low etch resistance, which limit the resolution of smaller features.Aim Evaluate the potential for area-selective deposition (ASD) to improve EUV pattern resolution (e.g., by increasing etch resistance).Approach We evaluate thermal compatibility, atomic layer deposition growth rate, and selectivity for TiO2 ASD on various organic EUV resist materials using water contact angle, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. The effects of photo-acid generator (PAG) and EUV exposure on polymer properties and selectivity are considered.Results The organic resist materials studied demonstrate thermal compatibility with TiO2 ALD (125? for 60 min). The TiO2 ALD process from TiCl4 and H2O proceeds readily on poly(tert-butyl methacrylate), poly(p-hydroxystyrene), and poly(p-hydroxystyrene-random-methacrylic acid) polymers, with and without PAG incorporation, in either the as-formed or EUV exposed state. However, TiO2 is inhibited on poly(cyclohexyl methacrylate).Conclusions We demonstrate that as-formed EUV resists can serve as either the growth or nongrowth surface during TiO2 ASD, thereby enabling resist hardening and tone inversion applications, respectively. These results serve as a basis for further ASD studies on EUV resist materials to improve pattern resolution in next-generation devices.