dc.contributor.author | Chino, M. | |
dc.contributor.author | Yokogawa, R. | |
dc.contributor.author | Ogura, A. | |
dc.contributor.author | Uchiyama, H. | |
dc.contributor.author | Tatsuoka, H. | |
dc.contributor.author | Shimura, Yosuke | |
dc.date.accessioned | 2023-11-03T09:10:09Z | |
dc.date.available | 2023-05-22T20:15:46Z | |
dc.date.available | 2023-11-03T09:10:09Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 0361-5235 | |
dc.identifier.other | WOS:000983919100002 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41609.2 | |
dc.source | WOS | |
dc.title | Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film | |
dc.type | Journal article | |
dc.contributor.imecauthor | Shimura, Yosuke | |
dc.contributor.orcidimec | Shimura, Yosuke::0000-0002-1944-9970 | |
dc.date.embargo | 9999-12-31 | |
dc.identifier.doi | 10.1007/s11664-023-10421-x | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 5218 | |
dc.source.endpage | 5133 | |
dc.source.journal | JOURNAL OF ELECTRONIC MATERIALS | |
dc.source.issue | 8 | |
dc.source.volume | 52 | |
imec.availability | Published - open access | |
dc.description.wosFundingText | AcknowledgmentsThis study was supported by JSPS KAKENHI (Grant No. JP21K04137) from the Japan Society for the Promotion of Science. The IXS measurements were performed at the SPring-8 facility with the approval of the JASRI (Proposal No. 2021B1203). Ge1-xSnx single-crystalline thin films used for the IXS measurements in this study were fabricated by IMEC. | |