Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects

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dc.contributor.author	Vermeersch, B.
dc.contributor.author	Rodriguez, R.
dc.contributor.author	Sibaja-Hernandez, A.
dc.contributor.author	Vais, A.
dc.contributor.author	Yadav, S.
dc.contributor.author	Parvais, B.
dc.contributor.author	Collaert, N.
dc.date.accessioned	2023-05-25T20:20:01Z
dc.date.available	2023-05-25T20:20:01Z
dc.date.issued	2022
dc.identifier.issn	2380-9248
dc.identifier.other	WOS:000968800700029
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/41623
dc.source	WOS
dc.title	Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects
dc.type	Proceedings paper
dc.contributor.imecauthor	Vermeersch, B.
dc.contributor.imecauthor	Rodriguez, R.
dc.contributor.imecauthor	Sibaja-Hernandez, A.
dc.contributor.imecauthor	Vais, A.
dc.contributor.imecauthor	Yadav, S.
dc.contributor.imecauthor	Collaert, N.
dc.identifier.doi	10.1109/IEDM45625.2022.10019370
dc.identifier.eisbn	978-1-6654-8959-1
dc.source.numberofpages	4
dc.source.peerreview	yes
dc.source.conference	International Electron Devices Meeting (IEDM)
dc.source.conferencedate	DEC 03-07, 2022
dc.source.conferencelocation	San Francisco
imec.availability	Under review

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Version	Item	Date	Summary
2	20.500.12860/41623.2	2023-06-02T07:36:49Z	validation by library/open access desk
1	20.500.12860/41623*	2023-05-25T20:20:01Z