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dc.contributor.authorCao, Jingchen
dc.contributor.authorWynocker, Isabella
dc.contributor.authorZhang, En Xia
dc.contributor.authorReed, Robert A.
dc.contributor.authorAlles, Michael L.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorArreghini, Antonio
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorBastos, Joao P.
dc.contributor.authorBosch, Geert Van den
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2023-06-27T08:10:58Z
dc.date.available2023-05-27T20:00:59Z
dc.date.available2023-06-27T08:10:58Z
dc.date.issued2023-04-18
dc.identifier.issn0018-9499
dc.identifier.otherWOS:000975399300046
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41652.2
dc.sourceWOS
dc.titleEffects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorBastos, Joao P.
dc.contributor.imecauthorBosch, Geert Van den
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.identifier.doi10.1109/TNS.2022.3227941
dc.source.numberofpages7
dc.source.peerreviewyes
dc.source.beginpage634
dc.source.endpage640
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.issue4
dc.source.volume70
imec.availabilityUnder review


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