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Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
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Authors
Cao, Jingchen
;
Wynocker, Isabella
;
Zhang, En Xia
;
Reed, Robert A.
;
Alles, Michael L.
;
Schrimpf, Ronald D.
;
Fleetwood, Daniel M.
;
Arreghini, Antonio
;
Rosmeulen, Maarten
;
Bastos, Joao
;
Van den Bosch, Geert
;
Linten, Dimitri
DOI
10.1109/TNS.2022.3227941
ISSN
0018-9499
Issue
4
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume
70
Title
Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
Publication type
Journal article
Embargo date
9999-12-31
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3
20.500.12860/41652.3
*
2023-08-01T14:58:05Z
validation by library/open access desk
2
20.500.12860/41652.2
2023-06-27T08:03:47Z
validation by imec author
1
20.500.12860/41652
2023-05-27T20:00:59Z
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