Browsing by author "Van den Bosch, Geert"

3D measurement of 3D NAND memory hole with CD-SEM and tilted FIB

Ohashi, Takeyoshi; Yamaguchi, Atsuko; Hasumi, Kazuhisa; Ikota, Masami; Tan, Chi Lim; Raymaekers, Tom; Van den Bosch, Geert; Furnemont, Arnaud; Lorusso, Gian (2017)

3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

Verreck, Devin; Arreghini, Antonio; Schanovsky, Franz; Stanojevic, Zlatan; Steiner, K.; Mitterbauer, F.; Karner, Markus; Van den Bosch, Geert; Furnemont, Arnaud (2019)

A comprehensive closed-form model for the quantized accumulation layer in MOS structures

Kol'dyaev, Victor; Van den Bosch, Geert; Deferm, Ludo (1998)

A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations

Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Pavan, Paolo; Van Houdt, Jan (2011)

A comprehensive variability study of doped HfO2 FeFET for memory applications

Ronchi, Nicolo; Ragnarsson, Lars-Ake; Celano, Umberto; Kaczer, Ben; Kaczmarek, Jakub; Banerjee, Kaustuv; McMitchell, Sean; Van den Bosch, Geert; Van Houdt, Jan (2022)

A fast and flexible thermal simulation tool validated on smart power devices

Desoete, B.; Moens, P.; Driessens, Evelien; Elattari, Brahim; Van den Bosch, Geert; Gillon, R.; Groeseneken, Guido (2005-05)

A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication

Kruv, Anastasiia; Gonzalez, Mario; Okudur, Oguzhan Orkut; Spampinato, Valentina; Franquet, Alexis; Vadakupudhu Palayam, Senthil; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten; De Wolf, Ingrid (2022)

A novel multilayer inter-gate dielectric enabling up To 18V program / erase window for planar NAND flash

Breuil, Laurent; Lisoni, Judit; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013-05)

A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

Ramesh, Siva; Banerjee, Kaustuv; Opsomer, Karl; Rachita, Iuliana; Bastos, Joao; Soulie, Jean-Philippe; Sebaai, Farid; Favia, Paola; Korytov, Maxim; Richard, Olivier; Breuil, Laurent; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2022)

A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology

Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011)

A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology

Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li-Qun; Le, Maggie; Lee, Won (2010)

A proper approach to characterize retention-after-cycling in 3D-Flash devices

Qiao, Fengying; Arreghini, Antonio; Blomme, Pieter; Van den Bosch, Geert; Pan, Liyang; Xu, Jun; Van Houdt, Jan (2013)

A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs

Chen, Zhuo; Ronchi, Nicolo; Tang, Hongwei; Walke, Amey; Izmailov, Roman; Popovici, Mihaela Ioana; van den Bosch, Geert; Rosmeulen, Maarten; Afanasiev, Valeri; Van Houdt, Jan (2024)