Browsing by author "Zhang, En Xia"
Now showing items 1-20 of 25
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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Jiang, Rong; Zhang, En Xia; Liao, Wenjun; Liang, Chundong; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri; Mitard, Jerome; Collaert, Nadine; Sioncke, Sonja; Waldron, Niamh (2018) -
Comparison of charge pumping and 1/f noise in irradiated Ge pMOSFETs
Francis, S.A.; Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Golloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2011) -
Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs
Zhang, Cher Xuang; Francis, Sarah Ashley; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2011) -
Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
Cao, Jingchen; Wynocker, Isabella; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao; Van den Bosch, Geert; Linten, Dimitri (2023-04-18) -
Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs
Arora, Rajan; Simoen, Eddy; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Choi, Bo K.; Mitard, Jerome; Meuris, Marc; Claeys, Cor; Madan, Anuj; Cressler, John D. (2010) -
Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs
Duan, Guo Xing; Hachtel, Jordan; Zhang, En Xia; Zhang, Cher Xuan; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Mitard, Jerome; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Mocuta, Anda; Chisholm, Matthew; Pantelides, Sokrates (2016) -
Effects of processing and radiation bias on leakage currents in Ge pMOSFETs
Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2010) -
Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Zhao, Simeng; jiang, Rong; Wang, Pang; Zhang, En Xia; Waldron, Niamh; Kunert, Bernadette; Mitard, Jerome; Collaert, Nadine; Soncke, Sonja; Linten, Dimitri; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2018-09) -
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
Li, Kan; Zhang, En Xia; Gorchichko, Mariia; Wang, Peng Fei; Reaz, Mahmud; Zhao, Simeng E.; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
Li, Kan; Luo, Xuyi; Rony, M. W.; Gorchichko, Mariia; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2023) -
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
Luo, Xuyi; Zhang, En Xia; Wang, Peng Fei; Li, Kan; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2023) -
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Rony, M. W.; Zhang, En Xia; Toguchi, Shintaro; Luo, Xuyi; Reaz, Mahmud; Li, Kan; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2022) -
Single-event induced charge collection in Ge-channel pMos FinFETs
Rony, M.W.; Samsel, Isaak; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahumed; Austin, Stephanie; Reed, Robert; Fleetwood, Robert; Alles, Mike; Linten, Dimitri; Mitard, Jerome; Schrimpf, Ronald (2020-07) -
Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
Ryder, Landen D.; Ryder, Kaitlyn L.; Sternberg, Andrew L.; Kozub, John A.; Zhang, En Xia; Linten, Dimitri; Croes, Kristof; Weller, Robert A.; Schrimpf, Ronald D.; Weiss, Sharon M.; Reed, Robert A. (2021) -
Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
Rony, M. W.; Samsel, Isaak K.; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahmud; Austin, Stephanie M.; Alles, Michael L.; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Bonaldo, Stefano; Gorchichko, Mariia; Zhang, En Xia; Ma, Teng; Mattiazzo, Serena; Bagatin, Marta; Paccagnella, Alessandro; Gerardin, Simone; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M. (2022) -
Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Mitard, Jerome; Zhang, En Xia; Fleetwood, Daniel; Hachtel, Jordan; Liang, Chundong; Reed, Robert; Alles, Michael; Schrimpf, Ronald; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Chisholm, Matthew; Pantelides, Sokrates (2016-07) -
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors
Guo, Zixiang; Li, Kan; Li, Xun; Luo, Xuyi; Zhang, En Xia; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Vaisman Chasin, Adrian; Mitard, Jerome; Linten, Dimitri (2023) -
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers
Guo, Zixiang; Zhang, En Xia; Vaisman Chasin, Adrian; Linten, Dimitri; Belmonte, Attilio; Kar, Gouri Sankar; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M. (2024)