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Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Publication:
Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Date
2018-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhao, Simeng
;
jiang, Rong
;
Wang, Pang
;
Zhang, En Xia
;
Waldron, Niamh
;
Kunert, Bernadette
;
Mitard, Jerome
;
Collaert, Nadine
;
Soncke, Sonja
;
Linten, Dimitri
;
Schrimpf, Ronald
;
Reed, Robert
;
Fleetwood, Daniel
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1999
since deposited on 2021-10-26
420
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Acq. date: 2025-10-24
Citations
Metrics
Views
1999
since deposited on 2021-10-26
420
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations