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Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Publication:
Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
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Date
2018
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhao, Simeng
;
jiang, Rong
;
Wang, Pang
;
Zhang, En Xia
;
Waldron, Niamh
;
Kunert, Bernadette
;
Mitard, Jerome
;
Collaert, Nadine
;
Soncke, Sonja
;
Linten, Dimitri
;
Schrimpf, Ronald
;
Reed, Robert
;
Fleetwood, Daniel
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2007
since deposited on 2021-10-26
Acq. date: 2026-08-05
Citations
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Views
2007
since deposited on 2021-10-26
Acq. date: 2026-08-05
Citations