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Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Publication:
Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Date
2016-07
Meeting abstract
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Zhang, En Xia
;
Fleetwood, Daniel
;
Hachtel, Jordan
;
Liang, Chundong
;
Reed, Robert
;
Alles, Michael
;
Schrimpf, Ronald
;
Linten, Dimitri
;
Witters, Liesbeth
;
Collaert, Nadine
;
Thean, Aaron
;
Chisholm, Matthew
;
Pantelides, Sokrates
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Abstract
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1973
since deposited on 2021-10-23
Acq. date: 2025-10-24
Citations
Metrics
Views
1973
since deposited on 2021-10-23
Acq. date: 2025-10-24
Citations