Publication:

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

Date

2016-07
Meeting abstract
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dc.contributor.authorMitard, Jerome
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorHachtel, Jordan
dc.contributor.authorLiang, Chundong
dc.contributor.authorReed, Robert
dc.contributor.authorAlles, Michael
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorChisholm, Matthew
dc.contributor.authorPantelides, Sokrates
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T12:53:12Z
dc.date.available2021-10-23T12:53:12Z
dc.date.issued2016-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27017
dc.source.conferenceIEEE Nuclear Space and Radiation Conference - NSREC
dc.source.conferencedate13/07/2016
dc.source.conferencelocationPortland, OR USA
dc.title

Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si

dc.typeMeeting abstract
dspace.entity.typePublication
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