Browsing by author "Reed, Robert A."
Now showing items 1-16 of 16
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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
Cao, Jingchen; Wynocker, Isabella; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao; Van den Bosch, Geert; Linten, Dimitri (2023-04-18) -
Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions
Griffoni, Alessio; Zuber, Paul; Dobrovolny, Petr; Roussel, Philippe; Linten, Dimitri; Alles, Michael L.; Schrimpf, Ronald D.; Reed, Robert A.; Kobayashi, Daisuke; Simoen, Eddy; Groeseneken, Guido (2011) -
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
Li, Kan; Zhang, En Xia; Gorchichko, Mariia; Wang, Peng Fei; Reaz, Mahmud; Zhao, Simeng E.; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
Li, Kan; Luo, Xuyi; Rony, M. W.; Gorchichko, Mariia; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2023) -
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Rony, M. W.; Zhang, En Xia; Toguchi, Shintaro; Luo, Xuyi; Reaz, Mahmud; Li, Kan; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2022) -
Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes
Ryder, Landen D.; Ryder, Kaitlyn L.; Sternberg, Andrew L.; Kozub, John A.; Zhang, En Xia; Linten, Dimitri; Croes, Kristof; Weller, Robert A.; Schrimpf, Ronald D.; Weiss, Sharon M.; Reed, Robert A. (2021) -
Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
Rony, M. W.; Samsel, Isaak K.; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahmud; Austin, Stephanie M.; Alles, Michael L.; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Bonaldo, Stefano; Gorchichko, Mariia; Zhang, En Xia; Ma, Teng; Mattiazzo, Serena; Bagatin, Marta; Paccagnella, Alessandro; Gerardin, Simone; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M. (2022) -
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors
Guo, Zixiang; Li, Kan; Li, Xun; Luo, Xuyi; Zhang, En Xia; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Vaisman Chasin, Adrian; Mitard, Jerome; Linten, Dimitri (2023) -
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers
Guo, Zixiang; Zhang, En Xia; Vaisman Chasin, Adrian; Linten, Dimitri; Belmonte, Attilio; Kar, Gouri Sankar; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M. (2024) -
Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Bonaldo, Stefano; Zhang, En Xia; Zhao, Simeng; Putcha, Vamsi; Parvais, Bertrand; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M. (2020) -
Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2019) -
Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2020-01) -
Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
Cao, Jingchen; Wang, Peng Fei; Li, Xun; Guo, Zixiang; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao P.; Van den Bosch, Geert; Linten, Dimitri (2022) -
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
Gorchichko, Mariia; Zhang, En Xia; Wang, Pan; Bonaldo, Stefano; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M. (2021)