Authors

Bonaldo, Stefano; Zhang, En Xia; Zhao, Simeng; Putcha, Vamsi; Parvais, Bertrand; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M.

ISSN

0018-9499

Issue

7

Journal

IEEE Transactions on Nuclear Science

Volume

67

Title

Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates

Publication type

Journal article

Embargo date

9999-12-31