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Articles
Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
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Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
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Date
2020
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bonaldo, Stefano
;
Zhang, En Xia
;
Zhao, Simeng
;
Putcha, Vamsi
;
Parvais, Bertrand
;
Linten, Dimitri
;
Gerardin, Simone
;
Paccagnella, Alessandro
;
Reed, Robert A.
;
Schrimpf, Ronald D.
;
Fleetwood, Daniel M.
Journal
IEEE Transactions on Nuclear Science
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2024
since deposited on 2021-10-28
Acq. date: 2025-12-09
Citations
Metrics
Views
2024
since deposited on 2021-10-28
Acq. date: 2025-12-09
Citations