Publication:

Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates

Date

2020
Journal article
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Author(s)

Bonaldo, Stefano
;
Zhang, En Xia
;
Zhao, Simeng
;
Putcha, Vamsi  
;
Parvais, Bertrand  
;
Linten, Dimitri  
;
Gerardin, Simone
;
Paccagnella, Alessandro
;
Reed, Robert A.
;
Schrimpf, Ronald D.
;
Fleetwood, Daniel M.

Journal

IEEE Transactions on Nuclear Science

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2027 since deposited on 2021-10-28
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