Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Publication:
Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Date
2020
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
44211.pdf
1.41 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bonaldo, Stefano
;
Zhang, En Xia
;
Zhao, Simeng
;
Putcha, Vamsi
;
Parvais, Bertrand
;
Linten, Dimitri
;
Gerardin, Simone
;
Paccagnella, Alessandro
;
Reed, Robert A.
;
Schrimpf, Ronald D.
;
Fleetwood, Daniel M.
Journal
IEEE Transactions on Nuclear Science
Abstract
Description
Metrics
Views
2023
since deposited on 2021-10-28
Acq. date: 2025-10-23
Citations
Metrics
Views
2023
since deposited on 2021-10-28
Acq. date: 2025-10-23
Citations