Publication:

Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates

Date

2020
Journal article
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dc.contributor.authorBonaldo, Stefano
dc.contributor.authorZhang, En Xia
dc.contributor.authorZhao, Simeng
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorParvais, Bertrand
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGerardin, Simone
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-28T20:25:49Z
dc.date.available2021-10-28T20:25:49Z
dc.date.embargo9999-12-31
dc.date.issued2020
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34797
dc.source.beginpage1312
dc.source.endpage1319
dc.source.issue7
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume67
dc.title

Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates

dc.typeJournal article
dspace.entity.typePublication
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