Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M.

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Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

Date

2020-01

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Paccagnella, Alessandro

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Schrimpf, Ronald D.

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Reed, Robert A.

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Fleetwood, Daniel M.

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IEEE Transactions on Nuclear Science

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2008 since deposited on 2021-10-29

Acq. date: 2025-12-09

Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

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