Publication:

Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

Date

2020-01
Journal article
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Author(s)

Zhao, Simeng E.
;
Bonaldo, Stefano
;
Wang, Pengfei
;
Zhang, En Xia
;
Waldron, Niamh  
;
Collaert, Nadine  
;
Putcha, Vamsi  
;
Linten, Dimitri  
;
Gerardin, Simone
;
Paccagnella, Alessandro
;
Schrimpf, Ronald D.
;
Reed, Robert A.
;
Fleetwood, Daniel M.

Journal

IEEE Transactions on Nuclear Science

Abstract

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2015 since deposited on 2021-10-29
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Acq. date: 2026-05-16

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