Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

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Authors

Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M.

ISSN

0018-9499

Issue

1

Journal

IEEE Transactions on Nuclear Science

Volume

67

Title

Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

Publication type

Journal article

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