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Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Publication:
Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Date
2020-01
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhao, Simeng E.
;
Bonaldo, Stefano
;
Wang, Pengfei
;
Zhang, En Xia
;
Waldron, Niamh
;
Collaert, Nadine
;
Putcha, Vamsi
;
Linten, Dimitri
;
Gerardin, Simone
;
Paccagnella, Alessandro
;
Schrimpf, Ronald D.
;
Reed, Robert A.
;
Fleetwood, Daniel M.
Journal
IEEE Transactions on Nuclear Science
Abstract
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2007
since deposited on 2021-10-29
Acq. date: 2025-10-23
Citations
Metrics
Views
2007
since deposited on 2021-10-29
Acq. date: 2025-10-23
Citations