Publication:

Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

Date

2020-01
Journal article
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dc.contributor.authorZhao, Simeng E.
dc.contributor.authorBonaldo, Stefano
dc.contributor.authorWang, Pengfei
dc.contributor.authorZhang, En Xia
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGerardin, Simone
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-29T08:58:31Z
dc.date.available2021-10-29T08:58:31Z
dc.date.issued2020-01
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36406
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8935103
dc.source.beginpage253
dc.source.endpage259
dc.source.issue1
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume67
dc.title

Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack

dc.typeJournal article
dspace.entity.typePublication
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