Browsing by author "Arreghini, Antonio"
Now showing items 1-20 of 87
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3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
Verreck, Devin; Arreghini, Antonio; Schanovsky, Franz; Stanojevic, Zlatan; Steiner, K.; Mitterbauer, F.; Karner, Markus; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Pavan, Paolo; Van Houdt, Jan (2011) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication
Kruv, Anastasiia; Gonzalez, Mario; Okudur, Oguzhan Orkut; Spampinato, Valentina; Franquet, Alexis; Vadakupudhu Palayam, Senthil; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten; De Wolf, Ingrid (2022) -
A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Ramesh, Siva; Banerjee, Kaustuv; Opsomer, Karl; Rachita, Iuliana; Bastos, Joao; Soulie, Jean-Philippe; Sebaai, Farid; Favia, Paola; Korytov, Maxim; Richard, Olivier; Breuil, Laurent; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2022) -
A proper approach to characterize retention-after-cycling in 3D-Flash devices
Qiao, Fengying; Arreghini, Antonio; Blomme, Pieter; Van den Bosch, Geert; Pan, Liyang; Xu, Jun; Van Houdt, Jan (2013) -
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics
Schanovsky, F.; Rzepa, G.; Stanojevic, Z.; Kernstock, C.; Baumgartner, O.; Karner, M.; Verreck, Devin; Arreghini, Antonio; Rosmeulen, Maarten (2021) -
An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory
Verreck, Devin; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2023) -
Analysis of performance/variability trade-off in Macaroni-type 3-D NAND Memory
Congedo, Gabriele; Arreghini, Antonio; Liu, Lifang; Capogreco, Elena; Lisoni, Judit; Huet, Karim; Toque-Tresonne, Ines; Van Aerde, Steven; Toledano Luque, Maria; Tan, Chi Lim; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devices
Bastos, Joao; Arreghini, Antonio; Verreck, Devin; Schanovsky, Franz; Degraeve, Robin; Linten, Dimitri; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories
Liu, Lifang; Arreghini, Antonio; Van den Bosch, Geert; Liyang, Pan; Van Houdt, Jan (2014) -
Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling
Lee, Ko-Hui; Degraeve, Robin; Toledano Luque, Maria; Arreghini, Antonio; Breuil, Laurent; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2015) -
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells
Rachidi, Sana; Arreghini, Antonio; Verreck, Devin; Donadio, Gabriele Luca; Banerjee, Kaustuv; Katcko, Kostantine; Oniki, Yusuke; Van den Bosch, Geert; Rosmeulen, Maarten (2022) -
Channel and gate stack charge trapping investigation in vertical 3D NAND devices with poly-silicon channel
Subirats, Alexandre; Arreghini, Antonio; Breuil, Laurent; Degraeve, Robin; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
Subirats, Alexandre; Capogreco, Elena; Degraeve, Robin; Arreghini, Antonio; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan; Furnemont, Arnaud (2016) -
Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model
Degraeve, Robin; Toledano Luque, Maria; Arreghini, Antonio; Tang, Baojun; Capogreco, Elena; Lisoni, Judit; Roussel, Philippe; Kaczer, Ben; Van den Bosch, Geert; Groeseneken, Guido; Van Houdt, Jan (2013) -
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices
Maconi, Alessandro; Arreghini, Antonio; Monzio Compagnoni, Christian; Van den Bosch, Geert; Spinelli, Alessandro S.; Van Houdt, Jan; Lacaita, Andrea L. (2012) -
Comprehensive understanding of charge lateral migration in 3D SONOS memories
Liu, Lifang; Arreghini, Antonio; Van den Bosch, Geert; Pan, Liyang; Van Houdt, Jan (2016) -
Defects characterization of hybrid floating gate/ inter-gate dielectric interface in flash memory
Zahid, Mohammed; Degraeve, Robin; Tang, Baojun; Lisoni, Judit; Van den Bosch, Geert; Van Houdt, Jan; Breuil, Laurent; Blomme, Pieter; Arreghini, Antonio (2014) -
Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels
Celano, Umberto; Capogreco, Elena; Lisoni, Judit; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Van den Bosch, Geert; Van Houdt, Jan; De Meyer, Kristin; Furnemont, Arnaud; Vandervorst, Wilfried (2016)