Browsing by author "Linten, Dimitri"
Now showing items 1-20 of 416
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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
3D technology roadmap and status
Marchal, Pol; Van der Plas, Geert; Eneman, Geert; Moroz, V.; Badaroglu, Mustafa; Mercha, Abdelkarim; Thijs, Steven; Linten, Dimitri; Katti, Guruprasad; Stucchi, Michele; Vandevelde, Bart; Oprins, Herman; Cherman, Vladimir; Croes, Kris; Redolfi, Augusto; La Manna, Antonio; Travaly, Youssef; Beyne, Eric; Cartuyvels, Rudi (2011) -
60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS
Raczkowski, Kuba; Thijs, Steven; Tseng, Jen-Chou; Chang, Tzu-Heng; Song, Ming-Hsiang; Linten, Dimitri; Nauwelaers, Bart; Wambacq, Piet (2012-01) -
90nm RF CMOS technology for low-power 900MHz applications
Ramos, Javier; Mercha, Abdelkarim; Jeamsaksiri, Wutthinan; Linten, Dimitri; Jenei, Snezana; Rooyackers, Rita; Verbeeck, Rita; Thijs, Steven; Scholten, Andries; Wambacq, Piet; Debusschere, Ingrid; Decoutere, Stefaan (2004) -
A 0.6 V 1.6 mW fully integrated voltage controlled oscillator in 90 nm CMOS aiming for the GPS L1 band
Aspemyr, Lars; Linten, Dimitri (2004) -
A 328 uW5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor
Linten, Dimitri; Sun, Xiao; Carchon, Geert; Jeamsaksiri, Wutthinan; Mercha, Abdelkarim; Ramos, Javier; Jenei, Snezana; Aspemyr, Lars; Scholten, Andries; Wambacq, Piet; Decoutere, Stefaan; Donnay, Stephane; De Raedt, Walter (2004-06) -
A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS
Linten, Dimitri; Thijs, Steven; Okushima, Mototsugu; Scholz, Mirko; Borremans, Jonathan; Dehan, Morin; Groeseneken, Guido (2009) -
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
Linten, Dimitri; Thijs, Steven; Mahadeva Iyer, Natarajan; Wambacq, Piet; Jeamsaksiri, Wutthinan; Ramos, Javier; Mercha, Abdelkarim; Jenei, Snezana; Donnay, Stephane; Decoutere, Stefaan (2004-09) -
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
Linten, Dimitri; Thijs, Steven; Mahadeva Iyer, Natarajan Mahadeva Iyer; Wambacq, Piet; Jeamsaksiri, Wutthinan; Ramos, Javier; Mercha, Abdelkarim; Jenei, Snezana; Decoutere, Stefaan; Donnay, Stephane (2005-06) -
A 5 kV HBM transformer-based ESD protected 5-6 GHz LNA
Borremans, Jonathan; Thijs, Steven; Wambacq, Piet; Linten, Dimitri; Rolain, Yves; Kuijk, Maarten (2007-06) -
A 90nm RF CMOS technology supported by device modelling and circuit demonstrators
Ramos, Javier; Mercha, Abdelkarim; Jeamsaksiri, Wutthinan; Linten, Dimitri; Jenei, Snezana; Thijs, Steven; Scholten, Andries; Wambacq, Piet; Debusschere, Ingrid; Decoutere, Stefaan (2004) -
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A BSIM-Based Predictive Hot-Carrier Aging Compact Model
Xiang, Yang; Tyaginov, Stanislav; Vandemaele, Michiel; Wu, Zhicheng; Franco, Jacopo; Bury, Erik; Truijen, Brecht; Parvais, Bertrand; Linten, Dimitri; Kaczer, Ben (2021) -
A cautionary note when looking for a truly reconfigurable resistive RAM PUF
Chuang, Kent; Degraeve, Robin; Fantini, Andrea; Groeseneken, Guido; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
A Compact Physics Analytical Model for Hot-Carrier Degradation
Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020) -
A DC-to-22 GHz 8.4mW compact dual-feedback wideband LNA in 90 nm digital CMOS
Okushima, Mototsugu; Borremans, Jonathan; Linten, Dimitri; Groeseneken, Guido (2009-06) -
A fully integrated 7.3 kV HBM ESD-protected transformer-Based 4.5-6 GHz CMOS LNA
Borremans, Jonathan; Thijs, Steven; Wambacq, Piet; Rolain, Yves; Linten, Dimitri; Kuijk, Maarten (2009) -
A fully-integrated method for RTN parameter extraction
Simicic, Marko; Morrison, Sebastien; Parvais, Bertrand; Weckx, Pieter; Kaczer, Ben; Sawada, Ken; Ammo, Hiroaki; Yamakawa, Shinya; Nomoto, Kazuki; Ono, Makoto; Linten, Dimitri; Verkest, Diederik; Wambacq, Piet; Groeseneken, Guido; Gielen, Georges (2017) -
A low cost 90nm RF-CMOS platform for record RF circuit performance
Jeamsaksiri, Wutthinan; Linten, Dimitri; Thijs, Steven; Carchon, Geert; Ramos, Javier; Mercha, Abdelkarim; Sun, Xiao; Soussan, Philippe; Dehan, Morin; Chiarella, Thomas; Venegas, Rafael; Subramanian, Vaidy; Scholten, A.; Wambacq, Piet; Velghe, Rudolf; Mannaert, Geert; Heylen, Nancy; Verbeeck, Rita; Boullart, Werner; Heyvaert, Ilse; Mahadeva Iyer, Natarajan; Groeseneken, Guido; Debusschere, Ingrid; Biesemans, Serge; Decoutere, Stefaan (2005-06) -
A multi-bits/cell PUF using analog breakdown positions in CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Kallstenius, Thomas; Groeseneken, Guido; Linten, Dimitri; Verbauwhede, Ingrid (2018)