Browsing by author "Linten, Dimitri"
Now showing items 21-40 of 414
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A physically unclonable function featuring 0% BER using soft oxide breakdown positions in 40nm CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
A physically unclonable function using soft oxide breakdown featuring 0% native BER and 51.8fJ/bit in 40nm CMOS
Chuang, Kent; Bury, Erik; Degraeve, Robin; Kaczer, Ben; Linten, Dimitri; Verbauwhede, Ingrid (2019) -
A physics-aware compact modeling framework for transistor aging in the entire bias space
Wu, Zhicheng; Franco, Jacopo; Roussel, Philippe; Tyaginov, Stanislav; Truijen, Brecht; Vandemaele, Michiel; Hellings, Geert; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Kaczer, Ben (2019) -
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes
Linten, Dimitri; Thijs, Steven; Borremans, Jonathan; Dehan, Morin; Tremouilles, David; Scholz, Mirko; Mahadeva Iyer, Natarajan; Wambacq, Piet; Decoutere, Stefaan; Groeseneken, Guido (2009) -
A Pragmatic Model to Predict Future Device Aging
Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu (2023) -
A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices
Sarkar, Deblina; Thijs, Steven; Linten, Dimitri; Russ, Christian; Gossner, Harald; Banerjee, Kaustav (2010) -
A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019) -
A silicon-controlled rectifier-based ESD protection for MEMS – Merits and challenges
Sangameswaran, Sandeep; Thijs, Steven; Scholz, Mirko; De Coster, Jeroen; Linten, Dimitri; Groeseneken, Guido; De Wolf, Ingrid (2011) -
A study of breakdown mechanisms in electrostatic actuators using mechanical response under EOS-ESD stress
Sangameswaran, Sandeep; De Coster, Jeroen; Scholz, Mirko; Linten, Dimitri; Thijs, Steven; Van Hoof, Chris; De Wolf, Ingrid; Groeseneken, Guido (2009) -
Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
Wu, Zhicheng; Franco, Jacopo; Claes, Dieter; Rzepa, Gerhard; Roussel, Philippe; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019) -
Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs
Xing, Guo; Hatchtel, Jordan; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Pantelides, Sokrates (2015-09) -
Active-lite interposer for 2.5 & 3D integration
Hellings, Geert; Scholz, Mirko; Detalle, Mikael; Velenis, Dimitrios; de Potter de ten Broeck, Muriel; Roda Neve, Cesar; Li, Yunlong; Van Huylenbroeck, Stefaan; Chen, Shih-Hung; Marinissen, Erik Jan; La Manna, Antonio; Van der Plas, Geert; Linten, Dimitri; Beyne, Eric; Thean, Aaron (2015) -
Advanced ESD power clamp design for SOI FinFET CMOS technology
Thijs, Steven; Tremouilles, David; Linten, Dimitri; Mahadeva Iyer, Raju; Griffoni, Alessio; Groeseneken, Guido (2010) -
Advanced planar bulk and multigate CMOS technology: analog circuit benchmarking up to mm-wave frequencies
Wambacq, Piet; Mercha, Abdelkarim; Scheir, Karen; Verbruggen, Bob; Borremans, Jonathan; De Heyn, Vincent; Thijs, Steven; Linten, Dimitri; Van der Plas, Geert; Parvais, Bertrand; Dehan, Morin; Decoutere, Stefaan; Soens, Charlotte; Collaert, Nadine; Jurczak, Gosia (2008) -
An ESD protected DC-to-6GHz 9.7 mW LNA in 90nm digital CMOS
Borremans, Jonathan; Wambacq, Piet; Linten, Dimitri (2007-02) -
An insight into the effects induced by heavy-ion strikes in
Griffoni, Alessio; Thijs, Steven; Chen, Shih-Hung; Tazzoli, Augusto; Cordoni, Martina; Colombo, Paolo; Paccagnella, Alessandro; Linten, Dimitri; Groeseneken, Guido (2011) -
An insight into the parasitic capacitances of SOI and bulk FinFET devices
Griffoni, Alessio; Thijs, Steven; Linten, Dimitri; Scholz, Mirko; Groeseneken, Guido; Meneghesso, Gaudenzio (2009) -
An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90nm RF CMOS
Linten, Dimitri; Thijs, Steven; Jeamsaksiri, Wutthinan; Ramos, Javier; Mercha, Abdelkarim; Wambacq, Piet; Mahadeva Iyer, Natarajan; Scholten, Andries J.; Decoutere, Stefaan (2005-06) -
An integrated measurement set-up to study the impact of atmosphere on ESD in MEMS
Sangameswaran, Sandeep; De Coster, Jeroen; Cherman, Vladimir; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; De Wolf, Ingrid; Groeseneken, Guido (2010) -
An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
Ji, Zhigang; Zhang, Xiong; Franco, Jacopo; Gao, Rui; Duan, Meng; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; Alian, AliReza; Linten, Dimitri; Zhou, Daisy; Collaert, Nadine; De Gendt, Stefan; Groeseneken, Guido (2015)