Browsing by author "Alles, Michael L."
Now showing items 1-8 of 8
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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
Cao, Jingchen; Wynocker, Isabella; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao; Van den Bosch, Geert; Linten, Dimitri (2023-04-18) -
Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions
Griffoni, Alessio; Zuber, Paul; Dobrovolny, Petr; Roussel, Philippe; Linten, Dimitri; Alles, Michael L.; Schrimpf, Ronald D.; Reed, Robert A.; Kobayashi, Daisuke; Simoen, Eddy; Groeseneken, Guido (2011) -
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
Li, Kan; Zhang, En Xia; Gorchichko, Mariia; Wang, Peng Fei; Reaz, Mahmud; Zhao, Simeng E.; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
Li, Kan; Luo, Xuyi; Rony, M. W.; Gorchichko, Mariia; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2023) -
Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
Rony, M. W.; Samsel, Isaak K.; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahmud; Austin, Stephanie M.; Alles, Michael L.; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
Total-dose response of HfO2/Hf-based bipolar resistive memories
Bi, Jinshun; Han, Zhengsheng; McCurdy, Mike; Reed, R. A.; Schrimpf, R. D.; Fleetwood, D. M.; Alles, Michael L.; Weller, Robert A.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2013-07) -
Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
Cao, Jingchen; Wang, Peng Fei; Li, Xun; Guo, Zixiang; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao P.; Van den Bosch, Geert; Linten, Dimitri (2022)