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Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
dc.contributor.author | Li, Kan | |
dc.contributor.author | Luo, Xuyi | |
dc.contributor.author | Rony, M. W. | |
dc.contributor.author | Gorchichko, Mariia | |
dc.contributor.author | Hiblot, Gaspard | |
dc.contributor.author | Van Huylenbroeck, Stefaan | |
dc.contributor.author | Jourdain, Anne | |
dc.contributor.author | Alles, Michael L. | |
dc.contributor.author | Reed, Robert A. | |
dc.contributor.author | Zhang, En Xia | |
dc.contributor.author | Fleetwood, Daniel M. | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.date.accessioned | 2023-05-27T20:01:00Z | |
dc.date.available | 2023-05-27T20:01:00Z | |
dc.date.issued | 2023-APR | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.other | WOS:000975399300021 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41653 | |
dc.source | WOS | |
dc.title | Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics | |
dc.type | Journal article | |
dc.contributor.imecauthor | Hiblot, Gaspard | |
dc.contributor.imecauthor | Van Huylenbroeck, Stefaan | |
dc.contributor.imecauthor | Jourdain, Anne | |
dc.contributor.orcidimec | Hiblot, Gaspard::0000-0002-3869-965X | |
dc.contributor.orcidimec | Van Huylenbroeck, Stefaan::0000-0001-9978-3575 | |
dc.identifier.doi | 10.1109/TNS.2023.3239844 | |
dc.source.numberofpages | 7 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 442 | |
dc.source.endpage | 448 | |
dc.source.journal | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | |
dc.source.issue | 4 | |
dc.source.volume | 70 | |
imec.availability | Under review |
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