dc.contributor.author | Torsi, Riccardo | |
dc.contributor.author | Munson, Kyle T. | |
dc.contributor.author | Pendurthi, Rahul | |
dc.contributor.author | Marques, Esteban | |
dc.contributor.author | Van Troeye, Benoit | |
dc.contributor.author | Huberich, Lysander | |
dc.contributor.author | Schuler, Bruno | |
dc.contributor.author | Feidler, Maxwell | |
dc.contributor.author | Wang, Ke | |
dc.contributor.author | Pourtois, Geoffrey | |
dc.contributor.author | Das, Saptarshi | |
dc.contributor.author | Asbury, John B. | |
dc.contributor.author | Lin, Yu-Chuan | |
dc.contributor.author | Robinson, Joshua A. | |
dc.date.accessioned | 2023-12-07T12:49:16Z | |
dc.date.available | 2023-08-19T18:10:06Z | |
dc.date.available | 2023-09-04T07:13:58Z | |
dc.date.available | 2023-12-07T12:49:16Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 1936-0851 | |
dc.identifier.other | WOS:001042168000001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/42365.3 | |
dc.source | WOS | |
dc.title | Dilute Rhenium Doping and its Impact on Defects in MoS2 | |
dc.type | Journal article | |
dc.contributor.imecauthor | Marques, Esteban | |
dc.contributor.imecauthor | Van Troeye, Benoit | |
dc.contributor.imecauthor | Pourtois, Geoffrey | |
dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
dc.contributor.orcidimec | Van Troeye, Benoit::0000-0003-2073-1188 | |
dc.identifier.doi | 10.1021/acsnano.3c02626 | |
dc.source.numberofpages | 12 | |
dc.source.peerreview | yes | |
dc.subject.discipline | Applied chemistry & chemical engineering | |
dc.source.beginpage | 15629 | |
dc.source.endpage | 15640 | |
dc.source.journal | ACS NANO | |
dc.identifier.pmid | MEDLINE:37534591 | |
dc.source.issue | 16 | |
dc.source.volume | 17 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | R.T., Y.-C.L, and J.A.R. acknowledge funding from NEWLIMITS, a center in nCORE as part of the Semiconductor Research Corporation (SRC) program sponsored by NIST through award number 70NANB17H041 and the Department of Energy (DOE) through award number DE-SC0010697. R.T. acknowledges funding from the 2D Crystal Consortium, National Science Foundation Materials Innovation Platform, under cooperative agreement DMR-1539916. Y.-C.L. thanks the support from the Center for Semiconductor Technology Research of National Yang Ming Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan and also thanks the Yushan Fellow Program by the MOE, Taiwan for the financial support. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship Program under grant no. DGE1255832. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. L.H. and B.S. acknowledge funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (grant agreement no. 948243). K.T.M., J.A.R., and J.B.A. acknowledge funding from the U.S. National Science Foundation Major Research Instrumentation program for development of the steady-state and time-resolved PL microscope in vacuum through award number DMR-1826790. E.M., B.V.T., and G.P. thank the Imec Industrial Affiliation Program (IIAP) for funding. | |