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Dilute Rhenium Doping and its Impact on Defects in MoS2

dc.contributor.authorTorsi, Riccardo
dc.contributor.authorMunson, Kyle T.
dc.contributor.authorPendurthi, Rahul
dc.contributor.authorMarques, Esteban
dc.contributor.authorVan Troeye, Benoit
dc.contributor.authorHuberich, Lysander
dc.contributor.authorSchuler, Bruno
dc.contributor.authorFeidler, Maxwell
dc.contributor.authorWang, Ke
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDas, Saptarshi
dc.contributor.authorAsbury, John B.
dc.contributor.authorLin, Yu-Chuan
dc.contributor.authorRobinson, Joshua A.
dc.date.accessioned2023-12-07T12:49:16Z
dc.date.available2023-08-19T18:10:06Z
dc.date.available2023-09-04T07:13:58Z
dc.date.available2023-12-07T12:49:16Z
dc.date.issued2023
dc.identifier.issn1936-0851
dc.identifier.otherWOS:001042168000001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42365.3
dc.sourceWOS
dc.titleDilute Rhenium Doping and its Impact on Defects in MoS2
dc.typeJournal article
dc.contributor.imecauthorMarques, Esteban
dc.contributor.imecauthorVan Troeye, Benoit
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecVan Troeye, Benoit::0000-0003-2073-1188
dc.identifier.doi10.1021/acsnano.3c02626
dc.source.numberofpages12
dc.source.peerreviewyes
dc.subject.disciplineApplied chemistry & chemical engineering
dc.source.beginpage15629
dc.source.endpage15640
dc.source.journalACS NANO
dc.identifier.pmidMEDLINE:37534591
dc.source.issue16
dc.source.volume17
imec.availabilityPublished - imec
dc.description.wosFundingTextR.T., Y.-C.L, and J.A.R. acknowledge funding from NEWLIMITS, a center in nCORE as part of the Semiconductor Research Corporation (SRC) program sponsored by NIST through award number 70NANB17H041 and the Department of Energy (DOE) through award number DE-SC0010697. R.T. acknowledges funding from the 2D Crystal Consortium, National Science Foundation Materials Innovation Platform, under cooperative agreement DMR-1539916. Y.-C.L. thanks the support from the Center for Semiconductor Technology Research of National Yang Ming Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan and also thanks the Yushan Fellow Program by the MOE, Taiwan for the financial support. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship Program under grant no. DGE1255832. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. L.H. and B.S. acknowledge funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (grant agreement no. 948243). K.T.M., J.A.R., and J.B.A. acknowledge funding from the U.S. National Science Foundation Major Research Instrumentation program for development of the steady-state and time-resolved PL microscope in vacuum through award number DMR-1826790. E.M., B.V.T., and G.P. thank the Imec Industrial Affiliation Program (IIAP) for funding.


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320.500.12860/42365.3*2023-12-07T12:47:23Zvalidation by library/open access desk
220.500.12860/42365.22023-08-28T07:10:20Zvalidation by imec author
120.500.12860/423652023-08-19T18:10:06Z

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