Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC Accelerator

Abstract

With shrinking device geometries, the device-to-device (D2D) variability of emerging memory devices, affect the performance of deep neural networks (DNN) and restrict the use of standalone devices to be used as Analog in-Memory Computing (AiMC) accelerators. For FeFET based AiMC designs, such effects can be controlled by using resistors or capacitors connected in series with FeFETs. However, in both cases, the effect of variability will again start dominating when the programming window shrinks further due to scaling towards smaller nanometer dimensions. Additionally, while resistance based solutions will add to the existing IR drop issues within the macro, capacitor based approach avoids such a case. In this paper, we evaluate a FeFET and capacitor based AiMC accelerator and study how finetuning cell operating parameters along with design modifications of the AiMC macro, can help in achieving a variability aware AiMC design. Using a 22-nm CMOS PDK augmented with FeFET model based on measured data, evaluation on a DNN with CIFAR-10 benchmark, demonstrated that following our approach, the implemented DNN achieves an accuracy of similar to 85% which is an improvement of similar to 13% over an untuned AiMC macro.