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Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling

dc.contributor.authorDe Wolf, Peter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSmith, H.
dc.contributor.authorKhalil, N.
dc.date.accessioned2021-10-14T12:51:00Z
dc.date.available2021-10-14T12:51:00Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4293
dc.sourceIIOimport
dc.titleComparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage540
dc.source.endpage544
dc.source.journalJ. Vacuum Science and Technology B
dc.source.issue1
dc.source.volumeB18
imec.availabilityPublished - open access
imec.internalnotesPapers from the 5th International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles; 1999


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