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Special issue on scaling limits of gate oxides - Foreword

dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-14T12:51:39Z
dc.date.available2021-10-14T12:51:39Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4301
dc.sourceIIOimport
dc.titleSpecial issue on scaling limits of gate oxides - Foreword
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.beginpageU3
dc.source.journalSemiconductor Science and Technology
dc.source.issue5
dc.source.volume15
imec.availabilityPublished - imec


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