dc.contributor.author | de Andrade, Maria Gloria Cano | |
dc.contributor.author | Nogueira, Carlos Roberto | |
dc.contributor.author | Graciano Junior, Nilton | |
dc.contributor.author | Doria, Rodrigo T. | |
dc.contributor.author | Trevisoli, Renan | |
dc.contributor.author | Simoen, Eddy | |
dc.date.accessioned | 2024-03-07T10:07:28Z | |
dc.date.available | 2023-12-14T17:35:51Z | |
dc.date.available | 2024-03-07T10:07:28Z | |
dc.date.issued | 2024 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | WOS:001111304200001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43259.2 | |
dc.source | WOS | |
dc.title | Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.identifier.doi | 10.1016/j.sse.2023.108807 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.beginpage | Art. 108807 | |
dc.source.endpage | N/A | |
dc.source.journal | SOLID-STATE ELECTRONICS | |
dc.source.issue | January | |
dc.source.volume | 211 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | The authors would like to acknowledge the imec's Partner Program on high-speed analog and RF devices imec and ARF team in for providing the samples. This work was supported by Sao Paulo Research Foundation (FAPESP) grant #2023/00123-7, #2023/08068-5 and #2019/15500-5. National Council for Scientific and Technological Development (CNPq) grants #427975/2016-6, #303938/2020-0, #406193/2022-3, and 406193/2022-3 (Namitec). Also financed in part by the Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior - Brasil (CAPES) - Finance Code 001 and CNPq. | |