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Evaluation of vacuum bonded GaAs/Si spin-valve transistors

dc.contributor.authorDessein, Kristof
dc.contributor.authorBoeve, Hans
dc.contributor.authorKumar, P. S. A.
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorLodder, J. C.
dc.contributor.authorDelaey, L.
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-14T12:54:18Z
dc.date.available2021-10-14T12:54:18Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4333
dc.sourceIIOimport
dc.titleEvaluation of vacuum bonded GaAs/Si spin-valve transistors
dc.typeJournal article
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage5155
dc.source.endpage5157
dc.source.journalJ. Applied Physics
dc.source.issue9, Part 2
dc.source.volume87
imec.availabilityPublished - open access


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