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The influence of Ti capping layers on CoSi2 formation

dc.contributor.authorDetavernier, C.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorCardon, F.
dc.contributor.authorDonaton, R. A.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T12:54:28Z
dc.date.available2021-10-14T12:54:28Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4335
dc.sourceIIOimport
dc.titleThe influence of Ti capping layers on CoSi2 formation
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage125
dc.source.endpage132
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume50
imec.availabilityPublished - imec


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