dc.contributor.author | Moser, Simon | |
dc.contributor.author | Aribia, Abdessalem | |
dc.contributor.author | Scaffidi, Romain | |
dc.contributor.author | Gilshtein, Evgeniia | |
dc.contributor.author | Brammertz, Guy | |
dc.contributor.author | Vermang, Bart | |
dc.contributor.author | Tiwari, Ayodhya N. | |
dc.contributor.author | Carron, Romain | |
dc.date.accessioned | 2024-02-12T14:57:32Z | |
dc.date.available | 2024-01-10T17:22:39Z | |
dc.date.available | 2024-01-12T10:52:47Z | |
dc.date.available | 2024-02-12T14:57:32Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 2574-0962 | |
dc.identifier.other | WOS:001131607800001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43375.3 | |
dc.source | WOS | |
dc.title | Controlled Li Alloying by Postsynthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells | |
dc.type | Journal article | |
dc.contributor.imecauthor | Scaffidi, Romain | |
dc.contributor.imecauthor | Brammertz, Guy | |
dc.contributor.imecauthor | Vermang, Bart | |
dc.contributor.orcidimec | Scaffidi, Romain::0000-0001-9766-1857 | |
dc.contributor.orcidimec | Brammertz, Guy::0000-0003-1404-7339 | |
dc.contributor.orcidimec | Vermang, Bart::0000-0003-2669-2087 | |
dc.date.embargo | 2023-12-13 | |
dc.identifier.doi | 10.1021/acsaem.3c02483 | |
dc.source.numberofpages | 11 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 12515 | |
dc.source.endpage | 12525 | |
dc.source.journal | ACS APPLIED ENERGY MATERIALS | |
dc.identifier.pmid | MEDLINE:38155875 | |
dc.source.issue | 24 | |
dc.source.volume | 6 | |
imec.availability | Published - open access | |
dc.description.wosFundingText | Rico Muff from the Transport at Nanoscale Interfaces Laboratory at Empa is gratefully acknowledged for carrying out Raman measurements. The Transport at Nanoscale Interfaces Laboratory is further acknowledged for granting access to SEM and Raman measurement facilities. The Laboratory for Surface Science & Coating Technologies at Empa is gratefully acknowledged for granting access to SIMS and XRD measurement facilities. | |