dc.contributor.author | Singh, Vivek | |
dc.contributor.author | Sinha, Jyoti | |
dc.contributor.author | Avasthi, Sushobhan | |
dc.date.accessioned | 2024-01-24T11:12:04Z | |
dc.date.available | 2024-01-11T17:16:18Z | |
dc.date.available | 2024-01-24T11:12:04Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 2637-6113 | |
dc.identifier.other | WOS:001132963700001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43384.2 | |
dc.source | WOS | |
dc.title | Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching | |
dc.type | Journal article | |
dc.contributor.imecauthor | Singh, Vivek | |
dc.contributor.imecauthor | Sinha, Jyoti | |
dc.contributor.orcidimec | Sinha, Jyoti::0000-0003-4360-7657 | |
dc.identifier.doi | 10.1021/acsaelm.3c00489 | |
dc.source.numberofpages | 10 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 6490 | |
dc.source.endpage | 6499 | |
dc.source.journal | ACS APPLIED ELECTRONIC MATERIALS | |
dc.source.issue | 12 | |
dc.source.volume | 5 | |
imec.availability | Published - imec | |
dc.description.wosFundingText | The authors acknowledge the Department of Science and Technology, Government of India, for financial support under its Nano Mission initiative project number SR/NM/NS1078/2016. The work was conducted at NNfC and MNCF with generous support from MeitY under grant MeitY 5(3)/2017- NANO, by the DST under grant DST/NM/NNetRA/2018(G)-IISc and MHRD. | |