dc.contributor.author | Farvacque, J. L. | |
dc.contributor.author | Bougrioua, Zahia | |
dc.contributor.author | Moerman, Ingrid | |
dc.date.accessioned | 2021-10-14T12:57:22Z | |
dc.date.available | 2021-10-14T12:57:22Z | |
dc.date.issued | 2000 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4365 | |
dc.source | IIOimport | |
dc.title | Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls | |
dc.type | Journal article | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 10213 | |
dc.source.endpage | 10221 | |
dc.source.journal | J. Physics: Condensed Matter | |
dc.source.issue | 49 | |
dc.source.volume | 12 | |
imec.availability | Published - open access | |
imec.internalnotes | Special issue cont. articles from the conference Extended Defects in Semiconductors 2000, Univ. of Sussex, July 2000 | |