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Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

dc.contributor.authorFarvacque, J. L.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T12:57:22Z
dc.date.available2021-10-14T12:57:22Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4365
dc.sourceIIOimport
dc.titleTheoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage10213
dc.source.endpage10221
dc.source.journalJ. Physics: Condensed Matter
dc.source.issue49
dc.source.volume12
imec.availabilityPublished - open access
imec.internalnotesSpecial issue cont. articles from the conference Extended Defects in Semiconductors 2000, Univ. of Sussex, July 2000


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