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Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

dc.contributor.authorTang, Hongwei
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorLin, Dennis
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorDekkers, Harold
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2024-08-08T13:28:49Z
dc.date.available2024-03-27T17:34:17Z
dc.date.available2024-08-08T13:28:49Z
dc.date.issued2024
dc.identifier.issn0038-1101
dc.identifier.otherWOS:001178473300001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43738.2
dc.sourceWOS
dc.titleCharacterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures
dc.typeJournal article
dc.contributor.imecauthorTang, Hongwei
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.orcidimecTang, Hongwei::0009-0005-1345-5551
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDelhougne, Romain::0009-0009-0129-709X
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecAfanasiev, Valeri::0000-0001-5018-4539
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.identifier.doi10.1016/j.sse.2024.108866
dc.source.numberofpages6
dc.source.peerreviewyes
dc.source.beginpageArt. 108866
dc.source.endpageN/A
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.issueApril
dc.source.volume214
imec.availabilityPublished - imec
dc.description.wosFundingTextThe authors would like to thank the support of IMEC's Industrial Partners of the Active Memory Program.


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220.500.12860/43738.2*2024-08-08T13:24:01Zvalidation by library/open access desk
120.500.12860/437382024-03-27T17:34:17Z

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