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Advances in n-Type Chemical Vapor Deposition Diamond Growth: Morphology and Dopant Control

dc.contributor.authorRouzbahani Bayatani, Rozita
dc.contributor.authorSankaran, Kamatchi Jothiramalingam
dc.contributor.authorPobedinskas, Paulius
dc.contributor.authorHaenen, Ken
dc.date.accessioned2024-09-23T07:33:31Z
dc.date.available2024-04-25T17:35:00Z
dc.date.available2024-09-23T07:33:31Z
dc.date.issued2024
dc.identifier.issn2643-6728
dc.identifier.otherWOS:001204976100001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43874.2
dc.sourceWOS
dc.titleAdvances in n-Type Chemical Vapor Deposition Diamond Growth: Morphology and Dopant Control
dc.typeJournal article
dc.contributor.imecauthorPobedinskas, Paulius
dc.contributor.imecauthorHaenen, Ken
dc.contributor.imecauthorRouzbahani Bayatani, Rozita
dc.contributor.orcidimecPobedinskas, Paulius::0000-0001-8136-5172
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.contributor.orcidimecRouzbahani Bayatani, Rozita::0000-0001-5528-1434
dc.identifier.doi10.1021/accountsmr.3c00273
dc.source.numberofpages11
dc.source.peerreviewyes
dc.source.beginpage775
dc.source.endpage785
dc.source.journalACCOUNTS OF MATERIALS RESEARCH
dc.source.issue7
dc.source.volume5
imec.availabilityPublished - imec
dc.description.wosFundingTextThe authors would like to thank all the current and former members of the Wide Band Gap Material group for their valuable contribution to these remarkable findings on the CVD growth of n-type diamond. The authors acknowledge Prof. Dr. David Eon at Universite Grenoble-Alps, CNRS, Institut Neel, Grenoble, France, for his contribution to the cathodoluminescence spectroscopy measurements. Financial support provided by the Research Foundation Flanders (FWO) in the form of project G0D4920N, the Special Research Fund (BOF) via the Methusalem NANO network are gratefully acknowledged.


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220.500.12860/43874.2*2024-09-23T07:30:40Zvalidation by library/open access desk
120.500.12860/438742024-04-25T17:35:00Z

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