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Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers

dc.contributor.authorGuo, Zixiang
dc.contributor.authorZhang, En Xia
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorLinten, Dimitri
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.date.accessioned2024-11-19T08:19:08Z
dc.date.available2024-06-23T17:35:16Z
dc.date.available2024-11-19T08:19:08Z
dc.date.issued2024
dc.identifier.issn0018-9499
dc.identifier.otherWOS:001207225100067
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44080.2
dc.sourceWOS
dc.titleTotal-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO2 Oxygen-Penetration Layers
dc.typeJournal article
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.identifier.doi10.1109/TNS.2023.3346825
dc.source.numberofpages8
dc.source.peerreviewyes
dc.source.beginpage461
dc.source.endpage468
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.issue4
dc.source.volume71
imec.availabilityPublished - imec
dc.description.wosFundingTextNo Statement Available


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220.500.12860/44080.2*2024-11-19T08:16:21Zvalidation by library/open access desk
120.500.12860/440802024-06-23T17:35:16Z

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