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Soft breakdown in very thin Ta2 O5 gate dielectric layers

dc.contributor.authorHoussa, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorHeon, J. S.
dc.contributor.authorHalliyal, A.
dc.contributor.authorOgle, B.
dc.date.accessioned2021-10-14T13:04:47Z
dc.date.available2021-10-14T13:04:47Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4435
dc.sourceIIOimport
dc.titleSoft breakdown in very thin Ta2 O5 gate dielectric layers
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage521
dc.source.endpage525
dc.source.journalSolid-State Electronics
dc.source.issue3
dc.source.volume44
imec.availabilityPublished - open access


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